Buy Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs) Products Online In India
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)
Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)

Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)

CHANZON

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Product Description:
The 2N7000 MOSFET is an N-Channel Enhancement Mode Field-Effect Transistor, designed for high-density cell construction to provide a low on-resistance (RDS(on)). It is a voltage-controlled small signal switch known for its ruggedness and reliability, making it ideal for a variety of applications.

Key Features:

  • Low RDS(on) for efficient power management
  • High saturation current capability
  • Reliable performance in various electronic circuits

Max Ratings:

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 0.2A
  • Power Dissipation (PD): 0.625W
  • Thermal Resistance from Junction to Ambient (RJA): 200/W
  • Junction Temperature (TJ): 150

Electrical Characteristics:

  • Drain-Source Breakdown Voltage (V(BR)DSS): 60V
  • Gate-Threshold Voltage (V(GS)th): 0.8 - 3V
  • Zero Gate Voltage Drain Current (IDSS): 1µA
  • On-state Drain Current (ID(ON)) at VGS=4.5V, VDS=10V: 75mA
  • Drain-Source On-Resistance (RDS(on)) at VGS=10V, ID=500mA: 5O
  • Drain-source on-voltage (VDS(on)) at VGS=4.5V, ID=75mA: 0.45V
  • Input Capacitance (Ciss): 60pF
  • Output Capacitance (Coss): 25pF
  • Reverse Transfer Capacitance (Crss) at VDS=25V, VGS=0V, f=1MHz: 5pF

Performance Metrics:

  • Turn-on Time (td(on)): 10ns
  • Turn-off Time (td(off)): 10ns (VDD=15V, RL=30O, ID=500mA, VGEN=10V, RG=25O)

This MOSFET is perfect for use as a load switch in portable devices and DC/DC converters, ensuring efficient and reliable operation.


  • Transistor Type: High-Quality NMOS N-Channel Power MOSFET Transistor.
  • Transistor Polarity: N-Channel, Ideal for High Performance Power Switching Applications.
  • Specification: VDSS up to 60V, ID up to 0.2A, PD of 0.4W at a Ta of 25 , with a low RDS(on) of 5.3 O.
  • Application: Versatile usage for amplification and power management in numerous electronic circuits, including power supplies and motor controls.
  • Package: Delivered in an Anti-Static bag providing superb electrostatic protection, ensuring ESD safety and long shelf life.
  • Item Dimensions: Width: 15 centimeters, Height: 1.3 centimeters, Length: 18 centimeters
  • Item Package Dimensions: Width: 9.398 centimeters, Height: 10.16 centimeters, Length: 0.762 centimeters

Attribute Value
color Black
item package weight 0.023
manufacturer CHANZON
brand CHANZON
supplier declared dg hz regulation not_applicable
batteries required False
item type keyword mosfet-transistors
product site launch date 1/14/2020 3:28:52 AM
size TO-92
material copper
part number 2N7000-TO-92-100
style 2N7000
batteries included False

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